Phase noise reduction of a 2 μm passively mode-locked laser through hybrid III-V/silicon integration by Li, Xiang, Sia, Brian Jia Xu, Wang, Wanjun, Qiao, Zhongliang, Guo, Xin, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Wang, Hong, Liu, Chongyang

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High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser by Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Zhang, Yu, Niu, Zhichuan, Tong, Cunzhu, Liu, Chongyang, Sia, Brian Jia Xu

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A nanoelectromechanical systems actuator driven and controlled by Q-factor attenuation of ring resonator by Dong, Bin, Ng, Geok Ing, Liu, Ai Qun, Cai, H., Kropelnicki, P., Tsai, J. M., Randles, A. B., Tang, M., Gu, Y. D., Suo, Z. G.

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Non-linear thermal resistance model for the simulation of high power GaN-based devices by Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.

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Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal by Arulkumaran, Subramaniam, Ng, Geok Ing, Ranjan, Kumud, Kumar, Chandra Mohan Manoj, Foo, Siew Chuen, Ang, Kian Siong, Vicknesh, Sahmuganathan, Dolmanan, Surani Bin, Bhat, Thirumaleshwara, Tripathy, Sudhiranjan

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A silicon-nanowire memory driven by optical gradient force induced bistability by Yang, Z. C., Gu, Y. D., Ng, Geok Ing, Ser, Wee, Kwong, D. L., Dong, Bin, Cai, H., Chin, Lip Ket, Huang, Jianguo, Liu, Ai Qun

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Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate by Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan

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Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon by Ye, G., Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Hofstetter, R., Li, Y., Anand, M. J., Ang, K. S., Bryan, Maung Ye Kyaw Thu, Foo, Siew Chuen

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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress by Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, Siew Chuen, Lee, K. H., Arulkumaran, Subramaniam, Ng, Geok Ing, Thompson, C. V., Gan, Chee Lip

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GaN-on-Silicon integration technology by Ng, Geok Ing, Arulkumaran, Subramaniam, Vicknesh, Sahmuganathan, Wang, H., Ang, K. S., Kumar, C. M. Manoj, Ranjan, K., Lo, Guo-Qiang, Tripathy, Sudhiranjan, Boon, Chirn Chye, Lim, Wei Meng

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Mid-infrared sensor based on a suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding by Mohamed Said Rouifed, Liu, Chongyang, Sia, Jiaxu, Zhou, Jin, Littlejohns, Callum George, Reed, Graham T., Wang, Hong, Zhang, Zecen, Ng, Geok Ing, Hu, Ting, Qiu, Haodong, Guo, Xin, Wang, Wanjun

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Relative intensity noise of silicon hybrid laser by Hu, Xiao Nan, Liu, Tao, Cao, Yu-Lian, Meng, Bo, Wang, Hong, Ng, Geok Ing, Luo, Xian Shu, Liow, Tsung Yang, Song, Jun Feng, Lo, Guo Qiang, Wang, Qi Jie

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Boron nitride coated three-dimensional graphene as an electrically insulating electromagnetic interference shield by Ngoh, Zhi Lin, Leong, Fei Ni, Tay, Roland Yijie, Whiteside, Matthew David, Chng, Soon Siang, Yu, Jong Jen, Tsang, Siu Hon, Tan, Dunlin, Ng, Geok Ing, Teo, Edwin Hang Tong

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Positive bias-induced Vth instability in graphene field effect transistors by Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu

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Experimental demonstration of thermally tunable Fano and EIT resonances in coupled resonant system on SOI platform by Littlejohns, Callum George, Zhang, Zecen, Ng, Geok Ing, Hu, Ting, Qiu, Haodong, Guo, Xin, Wang, Wanjun, Liu, Chongyang, Sia, Jiaxu, Zhou, Jin, Nedeljkovic, Milos, Reed, Graham T., Wang, Hong, Mohamed Saïd Rouifed

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High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers by Loke Wan Khai, Wang Yue, Lee Kwang Hong, Liu Zhihong, Xie Hanlin, Chiah Siau Ben, Kenneth Lee Eng Kian, Zhou Xing, Chuan Seng Tan, Ng Geok Ing, Eugene A. Fitzgerald, Yoon Soon Fatt

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High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers by Loke, Wan Khai, Wang, Yue, Lee, Kwang Hong, Liu, Zhihong, Xie, Hanlin, Chiah, Siau Ben, Lee, Kenneth Eng Kian, Zhou, Xing, Tan, Chuan Seng, Ng, Geok Ing, Fitzgerald, Eugene A., Yoon, Soon Fatt

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AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) by Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang

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Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications by Sandupatla, Abhinay

Other Authors: “…Ng Geok Ing…”
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Self-heating and trapping effect in AlGaN/GaN high electron mobility transistors on CVD-diamond by Kumud Ranjan

Other Authors: “…Ng Geok Ing…”
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