DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS. by Wilshaw, P, Booker, G

An SEM EBIC study of the electronic properties of dislocations in silicon by Wilshaw, P, Wilshaw, Peter

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE by Galloway, S, Wilshaw, P, Fell, T

On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements by Bonilla Osorio, R, Wilshaw, P

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion by Senkader, S, Wilshaw, P, Falster, R

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE by Wilshaw, P, Fell, T, Booker, G

STUDIES OF POROUS SILICON FIELD EMITTERS by Boswell, E, Seong, T, Wilshaw, P

AN ELECTRON-BEAM-INDUCED CURRENT STUDY OF DISLOCATIONS IN GAAS by Galloway, S, Wilshaw, P, Konkol, A

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON by Fell, T, Wilshaw, P, Decoteau, M

A technique for field effect surface passivation for silicon solar cells by Bonilla Osorio, RS, Wilshaw, P

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS by Wilshaw, P, Fell, T, Coteau, M

Potassium ions in SiO2: electrets for silicon surface passivation by Bonilla Osorio, R, Wilshaw, P

BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE by Wilshaw, P, Konkol, A, Booker, G

'Semi-insulating' silicon using deep level impurity doping: problems and potential by Mallik, K, Falster, R, Wilshaw, P

BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE by Konkol, A, Booker, G, Wilshaw, P

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM by Wilshaw, P, Ourmazd, A, Booker, G

Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation by Bonilla, R, Woodcock, F, Wilshaw, P

Schottky diode back contacts for high frequency capacitance studies on semiconductors by Mallik, K, Falster, R, Wilshaw, P

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON by Decoteau, M, Wilshaw, P, Falster, R

Modelling of the field emission microtriode with emitter covered with porous silicon by Nicolaescu, D, Filip, V, Wilshaw, P