Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon by Fraser, K, Falster, R, Wilshaw, P

Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon by Fraser, K, Falster, R, Wilshaw, P

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC by Ourmazd, A, Wilshaw, P, Cripps, R

Mechanism for secondary electron dopant contrast in the SEM by Sealy, C, Castell, M, Wilshaw, P

BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE by Wilshaw, P, Konkol, A, Booker, G

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS by Decoteau, M, Wilshaw, P, Falster, R

Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation by Wilshaw, P, Blood, A, Braban, C

A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis by Breese, M, Amaku, A, Wilshaw, P

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. by Ourmazd, A, Wilshaw, P, Booker, G

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES by Decoteau, M, Wilshaw, P, Falster, R

Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation by Osorio, R, Hamer, P, Wilshaw, P

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. by Ourmazd, A, Wilshaw, P, Booker, G

Residual gas effects on the emission characteristics of silicon field emitter arrays by Gilkes, M, Nicolaescu, D, Wilshaw, P

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON by Ourmazd, A, Wilshaw, P, Booker, G

Electron-beam-induced current study of dislocations in GaAs by Galloway, SA, Wilshaw, P, Konkol, A

GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON by Decoteau, M, Wilshaw, P, Falster, R

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON by Ourmazd, A, Wilshaw, P, Booker, G

GETTERING OF COPPER IN SILICON - PRECIPITATION AT EXTENDED SURFACE-DEFECTS by Decoteau, M, Wilshaw, P, Falster, R

Data for "Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation" by Bonilla, R, Wilshaw, P, Hamer, P

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM. by Wilshaw, P, Ourmazd, A, Booker, G