Effective antireflection and surface passivation of silicon using a SiO2/a-TiOx film stack by Bonilla Osorio, R, Davis, K, Schneller, E, Schoenfeld, W, Wilshaw, P

Near-band gap luminescence at room temperature from dislocations in silicon by Stowe, D, Galloway, SA, Senkader, S, Mallik, K, Falster, R, Wilshaw, P

The role of dislocations in producing efficient near-bandgap luminescence from silicon by Fraser, K, Stowe, D, GallowaY, S, Senkader, S, Falster, R, Wilshaw, P

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking by Alpass, C, Murphy, J, Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

Nitrogen in silicon: Transport and mechanical properties by Murphy, J, Alpass, C, Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

The influence of nitrogen on dislocation locking in float-zone silicon by Murphy, J, Giannattasio, A, Alpass, C, Senkader, S, Falster, R, Wilshaw, P

Long term stability of c-Si surface passivation using corona charged SiO2 by Bonilla Osorio, R, Reichel, C, Hermle, M, Hamer, P, Wilshaw, P

Nitrogen in silicon: Transport and mechanical properties by Murphy, J, Alpass, C, Giannattasio, A, Senkader, S, Falster, R, Wilshaw, P

Imaging of the strain field around precipitate particles using transmission ion channeling by King, P, Breese, M, Meekeson, D, Smulders, P, Wilshaw, P, Grime, G

Anodisation of gridded silicon field emitter arrays by Huang, M, Huq, SE, Prewett, P, Smith, G, Wilshaw, P, Korea, E

Fabrication of nanocrystalline aluminium islands using double-surface anodization by Booth, SE, Marsh, C, Mallik, K, Baranauskas, V, Sykes, J, Wilshaw, P

The behavior and transport of hydrogen in silicon solar cells observed through changes in contact resistance by Hamer, P, Li, H, Chan, C, Sen, C, Bonilla, R, Wilshaw, P

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon by Zeng, Z, Murphy, J, Falster, R, Ma, X, Yang, D, Wilshaw, P

High resolution deep level transient spectroscopy applied to extended defects in silicon by Evans-Freeman, J, Emiroglu, D, Vernon-Parry, K, Murphy, J, Wilshaw, P

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS. by Ourmazd, A, Wilshaw, P, Weber, E, Gottschalk, H, Booker, G, Alexander, H

Data for Observations of Contact Resistance in TOPCon and PERC Solar Cells by Liu, D, Wright, M, Goodarzi, M, Wilshaw, P R, Hamer, P, Bonilla, R S

Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion by Schnabel, M, Weiss, C, Loeper, P, Canino, M, Summonte, C, Wilshaw, P, Janz, S

Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography by Lotharukpong, C, Tweddle, D, Martin, T, Wu, M, Grovenor, C, Moody, M, Wilshaw, P

Saw damage gettering for industrially relevant mc‐Si feedstock by Shaw, E, Hamer, P, Collett, K, Bourrett-Sicotte, G, Bonilla, R, Wilshaw, P

A novel source of atomic hydrogen for passivation of defects in silicon by Hamer, P, Bourret-Sicotte, G, Martins, G, Wenham, A, Bonilla, R, Wilshaw, P