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ETCHING MECHANISM OF CCl<sub>4</sub>-DOPED GaAs GROWN BY MOCVD by Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk
Published 2013-08-01
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THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD by Т. А. Bagaev, М. А. Ladugin, А. А. Padalitsa, А. А. Marmalyuk
Published 2013-08-01
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