Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates by A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, E. B. Yakimov, M. P. Scheglov, I. V. Shchemerov, A. A. Vasilev, A. A. Kochkova, A. V. Chernykh, A. V. Chikiryaka, S. J. Pearton

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Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire by A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton

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