Charge carrier mobility in the configuration restructuring divacancies in silicon by A. P. Dolgolenko

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Modification of radiation defects in Si and Ge by background impurity by A. P. Dolgolenko

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Diffuse and drift movement of electrons in n-type silicon, irradiated by reactor fast neutrons by A. P. Dolgolenko

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Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz) by A. P. Dolgolenko, G. P. Gaidar, P. G. Litovchenko

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Ultrasound influence on the electrical activity of radiation defects in γ-irradiated n-type silicon crystals by V. M. Babych, A. P. Dolgolenko, Ja. M. Olikh, M. D. Tymochko

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Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

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Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

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Radiation hardness of silicon doped by germanium with high concentration of free oxygen by M. D. Varentsov, G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko

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