ON THE SPECIFIC FEATURES OF SILICON CARBIDE HETEROPOLYTYPE EPITAXY by S. Y. Davydov, A. A. Lebedev, A. S. Usikov

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STUDY OF MECHANISMS RESPONSIBLE FOR THE EFFICIENCY DEGRADATION OF THE III-NITRIDES LIGHT EMITTING DIODES by N. M. Shmidt, A. S. Usikov, E. I. Shabunina, A. E. Chernyakov, S. Y. Kurin, Y. N. Makarov, H. I. Helava, B. P. Papchenko

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Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy by A.Y. Polyakov, Jin-Hyeon Yun, A.S. Usikov, E.B. Yakimov, N.B. Smirnov, K.D. Shcherbachev, H. Helava, Y.N. Makarov, S.Y. Kurin, N.M. Shmidt, O.I. Rabinovich, S.I. Didenko, S.A. Tarelkin, B.P. Papchenko, In-Hwan Lee

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