Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates by Aabdin, Zainul, Mahfoud, Zackaria, Razeen, Ahmed S., Hui, Hui Kim, Patil, Dharmraj K., Yuan, Gao, Ong, Jesper, Tripathy, Sudhiranjan

Get full text