Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy حسب Agrawal, M., Radhakrishnan, K., Dharmarasu, Nethaji, Ravikiran, Lingaparthi

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Realization of two dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA-MBE حسب Sun, Z. Z., Radhakrishnan, K., Agrawal, M., Dharmarasu, Nethaji

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Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE حسب Agrawal, M., Radhakrishnan, K., Sun, Z. Z., Dharmarasu, Nethaji

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Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111) حسب Ravikiran, L., Radhakrishnan, K., Agrawal, M., Munawar Basha, S., Dharmarasu, Nethaji

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Predicting beta bursts from local field potentials to improve closed-loop DBS paradigms in Parkinson's patients حسب Martin Moraud, E, Tinkhauser, G, Agrawal, M, Brown, P, Bogacz, R

Mid-infrared GaN/AlGaN quantum cascade detector grown on silicon حسب Dror, Ben, Zheng, Yuanjin, Agrawal, M., Radhakrishnan, K., Orenstein, Meir, Bahir, Gad

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Association between the use of electronic cigarettes and subsequent initiation of tobacco cigarettes in the youth population of a city: A retrospective cohort study حسب Khadeejah Hussain, Sancheti P. V., Agrawal M, Parande M. A., Tambe M. P., Borle P

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Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy حسب Ravikiran, L., Dharmarasu, N., Radhakrishnan, K., Agrawal, M., Yiding, Lin, Arulkumaran, S., Vicknesh, S., Ng, G. I.

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Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy حسب Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok

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