Using Atom-Probe Tomography to Understand ZnO∶Al=SiO[subscript 2]=Si Schottky Diodes by Schoofs, Frank, Ramanathan, Shriram, Jaramillo, Rafael, Youssef, Amanda, Akey, Austin J, Buonassisi, Anthony

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Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon by Krich, Jacob J., Akey, Austin J., Recht, D., Aziz, Michael J., Sullivan, Joseph T., Simmons, Christie, Buonassisi, Tonio

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Deactivation of metastable single-crystal silicon hyperdoped with sulfur by Krich, Jacob J., Recht, Daniel, Aziz, Michael J., Akey, Austin J, Sullivan, Joseph Timothy, Buonassisi, Anthony, Simmons, Christie B.

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A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction by Mailoa, Jonathan P., Bailie, Colin D., Johlin, Eric Carl, Hoke, Eric T., Akey, Austin J., Nguyen, William H., McGehee, Michael D., Buonassisi, Tonio

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Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon by Sher, Meng-Ju, Krich, Jacob J., Recht, Daniel, Aziz, Michael J., Lindenberg, Aaron M., Akey, Austin J, Winkler, Mark Thomas, Buonassisi, Anthony, Simmons, Christie B.

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Optical loss analysis of monolithic perovskite/Si tandem solar cell by Bailie, Colin D., Hoke, Eric T., Nguyen, William H., McGehee, Michael D., Mailoa, Jonathan P, Akey, Austin J, Johlin, Eric Carl, Sofia, Sarah Elizabeth, Buonassisi, Anthony

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Highly tensile-strained Ge/InAlAs nanocomposites by Jung, Daehwan, Faucher, Joseph, Mukherjee, Samik, Ironside, Daniel J., Cabral, Matthew, Sang, Xiahan, Lebeau, James, Bank, Seth R., Buonassisi, Tonio, Moutanabbir, Oussama, Lee, Minjoo Larry, Akey, Austin J

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High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting by Pastor, David, Gandhi, Hemi H, Monmeyran, Corentin P, Akey, Austin J, Milazzo, Ruggero, Cai, Yan, Napolitani, Enrico, Gwilliam, Russell M, Crowe, Iain F, Michel, Jurgen, Kimerling, LC, Agarwal, Anuradha, Mazur, Eric, Aziz, Michael J

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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon by Hutchinson, David, Mathews, Jay, Sullivan, Joseph T., Recht, Daniel, Williams, James S., Warrender, Jeffrey M., Persans, Peter D., Aziz, Michael J., Mailoa, Jonathan P, Akey, Austin J, Simmons, Christine B, Sullivan, Joseph Timothy, Winkler, Mark Thomas, Buonassisi, Anthony

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