Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy by Takeki Itoh, Akhil Mauze, Yuewei Zhang, James S. Speck

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Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nicholas Valente, Akhil Mauze, Takeki Itoh, James S. Speck

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H2O vapor assisted growth of β-Ga2O3 by MOCVD by Fikadu Alema, Yuewei Zhang, Akhil Mauze, Takeki Itoh, James S. Speck, Brian Hertog, Andrei Osinsky

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Low 1014  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nazar Orishchin, Nicholas Valente, Akhil Mauze, James S. Speck

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MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature by Yuewei Zhang, Fikadu Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, Andrei Osinsky, James S. Speck

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Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3 by Kenny Huynh, Michael E. Liao, Akhil Mauze, Takeki Itoh, Xingxu Yan, James S. Speck, Xiaoqing Pan, Mark S. Goorsky

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Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy by Esmat Farzana, Akhil Mauze, Joel B. Varley, Thomas E. Blue, James S. Speck, Aaron R. Arehart, Steven A. Ringel

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Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film by Fikadu Alema, Brian Hertog, Partha Mukhopadhyay, Yuewei Zhang, Akhil Mauze, Andrei Osinsky, Winston V. Schoenfeld, James S. Speck, Timothy Vogt

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