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Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer by Marwan Mansor, Rizuan Norhaniza, Ahmad Shuhaimi, Muhammad Iznul Hisyam, Al-Zuhairi Omar, Adam Williams, Mohd Rofei Mat Hussin
Published 2023-05-01
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