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  1. 1
    Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS2 via Combined C‐AFM and ToF‐SIMS Characterization

    Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS2 via Combined C‐AFM and ToF‐SIMS Characterization by Valentina Spampinato, Yuanyuan Shi, Jill Serron, Albert Minj, Benjamin Groven, Thomas Hantschel, Paul van derHeide, Alexis Franquet

    Published 2023-03-01
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  2. 2
    Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces

    Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces by Quantong Li, Albert Minj, Yunzhi Ling, Changan Wang, Siliang He, Xiaoming Ge, Chenguang He, Chan Guo, Jiantai Wang, Yuan Bao, Zhuming Liu, Pierre Ruterana

    Published 2023-06-01
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  3. 3
    Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

    Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing by Walter Gonçalez Filho, Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, Matthias Marx, Dirk Fahle, Benoit Bakeroot, Stefaan Decoutere

    Published 2023-09-01
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