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    Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

    Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs by Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace

    Published 2021-12-01
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