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Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates by Tatiana S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, Alexander E. Kalmykov, Olga P. Kazarova, Evgeniy N. Mokhov, Kristina N. Mikaelyan, Alexander V. Myasoedov, Lev M. Sorokin, Kirill D. Shcherbachev
Published 2017-06-01
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