Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers Por Barry O’Sullivan, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin, Nadine Collaert

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