Showing 1 - 6 results of 6 for search 'Andrei Osinsky', query time: 0.03s
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Ge doping of β-Ga2O3 by MOCVD by Fikadu Alema, George Seryogin, Alexei Osinsky, Andrei Osinsky
Published 2021-09-01
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Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nicholas Valente, Akhil Mauze, Takeki Itoh, James S. Speck
Published 2019-12-01
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H2O vapor assisted growth of β-Ga2O3 by MOCVD by Fikadu Alema, Yuewei Zhang, Akhil Mauze, Takeki Itoh, James S. Speck, Brian Hertog, Andrei Osinsky
Published 2020-08-01
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Low 1014 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD by Fikadu Alema, Yuewei Zhang, Andrei Osinsky, Nazar Orishchin, Nicholas Valente, Akhil Mauze, James S. Speck
Published 2020-02-01
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