Showing 1 - 4 results of 4 for search 'Andrew A. Allerman' Skip to content
VuFind
    • English
    • Deutsch
    • Español
    • Français
    • Italiano
    • 日本語
    • Nederlands
    • Português
    • Português (Brasil)
    • 中文(简体)
    • 中文(繁體)
    • Türkçe
    • עברית
    • Gaeilge
    • Cymraeg
    • Ελληνικά
    • Català
    • Euskara
    • Русский
    • Čeština
    • Suomi
    • Svenska
    • polski
    • Dansk
    • slovenščina
    • اللغة العربية
    • বাংলা
    • Galego
    • Tiếng Việt
    • Hrvatski
    • हिंदी
    • Հայերէն
    • Українська
    • Sámegiella
    • Монгол
Advanced
  • Author
  • Andrew A. Allerman
Showing 1 - 4 results of 4 for search 'Andrew A. Allerman', query time: 0.02s Refine Results
  1. 1
    Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage

    Etched-and-Regrown GaN <italic>pn</italic>-Diodes With 1600 V Blocking Voltage by Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith

    Published 2021-01-01
    Get full text
    Article
  2. 2
    Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield☆

    Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield☆ by Andrew T. Binder, James A. Cooper, Jeffrey Steinfeldt, Andrew A. Allerman, Richard Floyd, Luke Yates, Robert J. Kaplar

    Published 2023-09-01
    Get full text
    Article
  3. 3
    High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs

    High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs by Andrew T. Binder, Jeffrey Steinfeldt, Kevin J. Reilly, Richard S. Floyd, Peter T. Dickens, Joseph P. Klesko, Andrew A. Allerman, Robert J. Kaplar

    Published 2024-01-01
    Get full text
    Article
  4. 4
    Operation Up to 500 &#x00B0;C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors

    Operation Up to 500 &#x00B0;C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors by Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton

    Published 2019-01-01
    Get full text
    Article

Search Tools:

  • RSS Feed
  • Email Search

Search Options

  • Search History
  • Advanced Search

Find More

  • Browse the Catalog
  • Browse Alphabetically
  • Explore Channels
  • Course Reserves
  • New Items

Need Help?

  • Search Tips
  • Ask a Librarian
  • FAQs