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Operation Up to 500 °C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors by Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton
Published 2019-01-01
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