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Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition by Kevin D. Leedy, Kelson D. Chabak, Vladimir Vasilyev, David C. Look, Krishnamurthy Mahalingam, Jeff L. Brown, Andrew J. Green, Cynthia T. Bowers, Antonio Crespo, Darren B. Thomson, Gregg H. Jessen
Published 2018-10-01
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Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy by Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom
Published 2023-04-01
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β-Gallium oxide power electronics by Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki
Published 2022-02-01
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