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    Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters

    Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters por Anton Losev, Vladimir Zavodilenko, Andrey Koziy, Yury Kurochkin, Alexander Gorbatsevich

    Publicado 2022-01-01
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