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Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer by Alexander S. Lenshin, Pavel V. Seredin, Dmitry S. Zolotukhin, Artemy N. Beltyukov, Andrey M. Mizerov, Igor A. Kasatkin, Ali O. Radam, Evelina P. Domashevskaya
Published 2022-03-01
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Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy by Pavel V. Seredin, Nikolay A. Kurilo, Obaid Radam Ali, Nikita S. Buylov, Dmitry L. Goloshchapov, Sergey Alexandrovich Ivkov, Alexandr S. Lenshin, Ivan N. Arsentyev, Alexey V. Nashchekin, Shukrilo Sh. Sharofidinov, Andrey M. Mizerov, Maksim S. Sobolev, Evgeniy V. Pirogov, Igor V. Semeykin
Published 2023-03-01
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