Inducing alternating nanoscale rectification in a dielectric material for bidirectional-trigger artificial synapses by Berco, Dan, Ang, Diing Shenp

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Bioinspired robotic vision with online learning capability and rotation-invariant properties by Berco, Dan, Ang, Diing Shenp

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First principle investigation of electronic transport properties of the edge shaped graphene-porphine molecular junction device by Kole, Abhisek, Ang, Diing Shenp

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The link between NBTI and TDDB of high-k gate P-MOSFETs by Gao, Yuan, Ang, Diing Shenp

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Impact of Lanthanum on positive-bias temperature instability - insight from first-principles simulation by Gu, Chen Jie, Ang, Diing Shenp

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Evolution of hole trapping in the oxynitride gate p-MOSFET subjected to negative-bias temperature stressing by Boo, A. A., Ang, Diing Shenp

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Impact of voltage-accelerated stress on hole trapping at operating condition by Tung, Zhi Yan, Ang, Diing Shenp

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Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy by Duan, T. L., Pan, J. S., Ang, Diing Shenp

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Conductive Bridge Random Access Memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications by Abbas, Haider, Li, Jiayi, Ang, Diing Shenp

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Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy by Yew, K. S., Bersuker, G., Ang, Diing Shenp

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Negative-bias temperature instability – insight from recent dynamic stress experiments by Ang, Diing Shenp, Boo, A. A., Gao, Yuan

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On the evolution of switching oxide traps in the HfO2/TiN gate stack subjected to positive- and negative-bias temperature stressing by Gao, Yuan, Ang, Diing Shenp, Gu, Chen Jie

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An optoneuronic device with realistic retinal expressions for bioinspired machine vision by Berco, Dan, Ang, Diing Shenp, Zhang, Hai Zhong

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Visible light detection and memory capabilities in MgO/HfO bilayer-based transparent structure for photograph sensing by Kumar, Dayanand, Kalaga, Pranav Sairam, Ang, Diing Shenp

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GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching by Ali, Asif, Abbas, Haider, Li, Jiayi, Ang, Diing Shenp

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Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure by Duan, Tian Li, Pan, Ji Sheng, Ang, Diing Shenp

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New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing by Boo, Ann Ann, Tung, Zhi Yan, Ang, Diing Shenp

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Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs by Gao, Yuan, Ang, Diing Shenp, Young, C. D., Bersuker, G.

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On the area scalability of valence-change memristors for neuromorphic computing by Ang, Diing Shenp, Zhou, Yu, Yew, Kwang Sing, Berco, Dan

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Interfacial chemistry study of GaN by trimethylaluminum-only cycles and X-ray photoelectron spectroscopy by Ang, Diing Shenp, Gu, C. J., Duan, T. L., Pan, J. S.

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