Design and fabrication of III-V RF devices for MMIC applications by Ang, Kian Siong

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Investigation of temperature-dependent lasing and optical gain characteristics of 1.3-μm inas quantum dot laser by Liu, Chongyang, Wang, Rui, Wang, Hong, Meng, Qianqian, Ang, Kian Siong

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High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes by Meng, Qianqian, Wang, Hong, Liu, Chongyang, Guo, Xin, Gao, Jianjun, Ang, Kian Siong

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High-responsivity modulation-doped AlGaAs/InGaAs thermopiles for uncooled IR-FPA utilizing integrated HEMT-MEMS technology by Abe, Masayuki, Abe, Yuki, Kogushi, Noriaki, Ang, Kian Siong, Hofstetter, René, Wang, Hong, Ng, Geok Ing

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Band alignment between GaN and ZrO2 formed by atomic layer deposition by Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN by Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong

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Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack by Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud

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Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition by Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition by Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN by Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

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High-Photocurrent and Wide-Bandwidth UTC Photodiodes With Dipole-Doped Structure by Meng, Qian Qian, Wang, Hong, Liu, Chong Yang, Ang, Kian Siong, Guo, Xin, Gao, Bo, Tian, Yang, Manoj Kumar, Chandra Mohan, Gao, Jianjun

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Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon by Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Manoj Kumar, Chandra Mohan, Ang, Kian Siong, Anand, Mulagumoottil Jesudas, Wang, Hong, Hofstetter, René, Ye, Gang

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Compact, hybrid III-V/silicon Vernier laser diode operating from 1955-1992 nm by Sia, Brian Jia Xu, Li, Xiang, Wang, Wanjun, Qiao, Zhongliang, Guo, Xin, Wang, Jiawei, Littlejohns, Callum George, Liu, Chongyang, Reed, Graham T., Ang, Kian Siong, Wang, Hong

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Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal by Arulkumaran, Subramaniam, Ng, Geok Ing, Ranjan, Kumud, Kumar, Chandra Mohan Manoj, Foo, Siew Chuen, Ang, Kian Siong, Vicknesh, Sahmuganathan, Dolmanan, Surani Bin, Bhat, Thirumaleshwara, Tripathy, Sudhiranjan

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Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate by Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Tan, Joyce Pei Ying, Lin, Vivian Kaixin, Todd, Shane, Lo, Guo-Qiang, Tripathy, Sudhiranjan

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Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band by Sia, Brian Jia Xu, Li, Xiang, Wang, Jiawei, Wang, Wanjun, Qiao, Zhongliang, Guo, Xin, Lee, Chee Wei, Sasidharan, Ashesh, Gunasagar, S., Littlejohns, Callum G., Liu, Chongyang, Reed, Graham T., Ang, Kian Siong, Wang, Hong

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