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    4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process

    4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process by Xiaohong Cheng, Yongliang Li, Fei Zhao, Anlan Chen, Haoyan Liu, Chun Li, Qingzhu Zhang, Huaxiang Yin, Jun Luo, Wenwu Wang

    Published 2022-03-01
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