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    Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

    Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment by Ann-Kathrin Kleinschmidt, Lars Barzen, Johannes Strassner, Christoph Doering, Henning Fouckhardt, Wolfgang Bock, Michael Wahl, Michael Kopnarski

    Published 2016-11-01
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