Nanoelectronics challenges for the 21st century by Antoniadis, Dimitri A.

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High electron mobility germanium MOSFETs: Effect of n-type channel implants and ozone surface passivation by Hennessy, J., Antoniadis, Dimitri A.

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GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics by Chowdhury, Nadim, Antoniadis, Dimitri A., Palacios, Tomas

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On Backscattering and Mobility in Nanoscale Silicon MOSFETs by Jeong, Changwook, Antoniadis, Dimitri A., Lundstrom, Mark S.

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SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication by Cheng, Zhiyuan, Fitzgerald, Eugene A., Antoniadis, Dimitri A.

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A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters by Khakifirooz, A., Nayfeh, Osama M., Antoniadis, Dimitri A.

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Strained-Si1-xGex/Si Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior by Nayfeh, Osama M., Hoyt, Judy L., Antoniadis, Dimitri A.

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Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs by Sajjad, Redwan Noor, Chern, Winston, Hoyt, Judy L, Antoniadis, Dimitri A

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Physical Fault Tolerance of Nanoelectronics by Szkopek, Thomas, Roychowdhury, Vwani P., Antoniadis, Dimitri A., Damoulakis, John N.

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MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels by Fitzgerald, Eugene A., Lee, Minjoo L., Leitz, Christopher W., Antoniadis, Dimitri A.

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Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs by Brar, B., Kim, D. H., del Alamo, Jesus A., Antoniadis, Dimitri A.

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Statistical Modeling with the Virtual Source MOSFET Model by Yu, Li, Wei, Lan, Elfadel, Ibrahim M., Antoniadis, Dimitri A., Boning, Duane S.

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Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor by Agarwal, Sapan, Teherani, James T., Hoyt, Judy L., Antoniadis, Dimitri A., Yablonovitch, Eli

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RF performance of short channel graphene field-effect transistor by Wu, Y. Q., Lin, Y. -M., Jenkins, K. A., Ott, J. A., Dimitrakopoulos, C., Farmer, Damon B., Xia, F., Grill, A., Antoniadis, Dimitri A., Avouris, Phaedon, Antoniadis, Dimitri A.

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Remembrance of Transistors Past by Yu, Li, Saxena, Sharad, Hess, Christopher, Elfadel, Abe, Antoniadis, Dimitri A., Boning, Duane S

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Si Industry at a Crossroads: New Materials or New Factories? by Fitzgerald, Eugene A., Leitz, Christopher W., Lee, Minjoo L., Antoniadis, Dimitri A., Currie, Matthew T.

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Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si₁₋xGex/Si virtual substrates by Lee, Minjoo L., Leitz, Christopher W., Cheng, Zhiyuan, Antoniadis, Dimitri A., Fitzgerald, Eugene A.

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Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate by Yu, Hongpeng, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A.

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Statistical library characterization using belief propagation across multiple technology nodes by Yu, Li, Saxena, Sharad, Hess, Christopher, Elfadel, Ibrahim M., Antoniadis, Dimitri A., Boning, Duane S.

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Nanometer-Scale III-V MOSFETs by Del Alamo, Jesus A, Antoniadis, Dimitri A, Lin, Jianqiang, Lu, Wenjie, Vardi, Alon, Zhao, Xin

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