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    Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer

    Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer by Alexander S. Lenshin, Pavel V. Seredin, Dmitry S. Zolotukhin, Artemy N. Beltyukov, Andrey M. Mizerov, Igor A. Kasatkin, Ali O. Radam, Evelina P. Domashevskaya

    Published 2022-03-01
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