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    Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

    Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition by Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Ilya Shashkin, Nikita Pikhtin

    Published 2023-08-01
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  2. 2
    Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows

    Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al<sub>z</sub>Ga<sub>1−z</sub>As (0 ≤ <i>z</i> ≤ 0.3) Layers in Arrays of Ultrawide Windows by Viktor Shamakhov, Sergey Slipchenko, Dmitriy Nikolaev, Ilya Soshnikov, Alexander Smirnov, Ilya Eliseyev, Artyom Grishin, Matvei Kondratov, Artem Rizaev, Nikita Pikhtin, Peter Kop’ev

    Published 2023-07-01
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