Effective suppression of current collapse in both E- and D-mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] passivation ανά Vicknesh, Sahmuganathan, Arulkumaran, Subramaniam, Ng, Geok Ing

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs ανά Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing

Λήψη πλήρους κειμένου

High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon ανά Ranjan, Kumud, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack ανά Anand, M. J., Ng, G. I., Vicknesh, S., Arulkumaran, Subramaniam, Ranjan, K.

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate ανά Whiteside, Matthew, Arulkumaran, Subramaniam, Dikme, Yilmaz, Sandupatla, Abhinay, Ng, Geok Ing

Λήψη πλήρους κειμένου

A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression ανά Zhang, Junbin, Syamal, Binit, Zhou, Xing, Arulkumaran, Subramaniam, Ng, Geok Ing

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon ανά Vicknesh, S., Ng, G. I., Liu, Z. H., Selvaraj, S. L., Egawa, T., Arulkumaran, Subramaniam

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors ανά Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ing, Ng Geok, Nitta, Shugo, Kennedy, John, Amano, Hiroshi

Λήψη πλήρους κειμένου

Microwave research activities in Singapore ανά Yeo, S. P., Ing, G. I., Alphones, Arokiaswami, Ting, S. K., Ong, L. C., Arulkumaran, Subramaniam

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate ανά Arulkumaran, Subramaniam, Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si(111) by ammonia molecular beam epitaxy ανά Dharmarasu, Nethaji, Radhakrishnan, K., Agrawal, M., Ravikiran, Lingaparthi, Arulkumaran, Subramaniam, Lee, Kenneth E., Ing, Ng Geok

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Band alignment between GaN and ZrO2 formed by atomic layer deposition ανά Ye, Gang, Wang, Hong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering ανά Fiedler, Holger, Leveneur, Jérôme, Mitchell, David R. G., Arulkumaran, Subramaniam, Ng, Geok Ing, Alphones, Arokiaswami, Kennedy, John

Λήψη πλήρους κειμένου

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN ανά Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Liu, Zhi Hong, Ranjan, Kumud, Ang, Kian Siong

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors ανά Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Ye, Gang, Manoj Kumar, Chandra Mohan, Anand, Mulagumoottil Jesudas, Liu, Zhi Hong

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal-oxide-semiconductor-compatible non-gold metal stack ανά Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Wang, Hong, Ang, Kian Siong, Kumar, Chandramohan Manoj, Teo, Khoon Leng, Ranjan, Kumud

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V ανά Teo, Khoon Leng, Ng, Geok Ing, Ranjan, Kumud, Shoron, O. F., Arulkumaran, Subramaniam, Rajan, S., Dolmanan, S. B., Manoj Kumar, Chandra Mohan, Tripathy, S.

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου

Low voltage high-energy α-particle detectors by GaN-on-GaN Schottky diodes with record-high charge collection efficiency ανά Sandupatla, Abhinay, Arulkumaran, Subramaniam, Ranjan, Kumud, Ng, Geok Ing, Murmu, Peter P., Kennedy, John, Nitta, Shugo, Honda, Yoshio, Deki, Manato, Amano, Hiroshi

Λήψη πλήρους κειμένου

First demonstration of high-frequency InAlN/GaN high-electron-mobility transistor using GaN-on-insulator technology via 200 mm wafer bonding ανά Li, Hanchao, Xie, Hanlin, Wang, Yue, Yulia, Lekina, Ranjan, Kumud, Singh, Navab, Chung, Surasit, Lee, Kenneth E., Arulkumaran, Subramaniam, Ng, Geok Ing

Λήψη πλήρους κειμένου

Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition ανά Ye, Gang, Wang, Hong, Ng, Serene Lay Geok, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong

Λήψη πλήρους κειμένου
Λήψη πλήρους κειμένου