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Austing, D
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Austing, D
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Austing, D
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1
The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition
by
Smith, J
,
Klipstein, P
,
Austing, D
,
Grey, R
,
Hill, G
Published 1995
Journal article
2
THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION
by
Smith, J
,
Klipstein, P
,
Austing, D
,
Grey, R
,
Hill, G
Published 1995
Conference item
3
INTERFACE EFFECTS, BAND OVERLAP AND THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN INAS/GASB INTERBAND RESONANT-TUNNELING DIODES
by
Khancheema, U
,
Klipstein, P
,
Austing, D
,
Smith, J
,
Mason, N
,
Walker, P
,
Hill, G
Published 1994
Conference item
4
Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes
by
Khan-Cheema, U
,
Klipstein, P
,
Austing, D
,
Smith, J
,
Mason, N
,
Walker, P
,
Hill, G
Published 1994
Journal article
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