Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting by Recht, Daniel, Sullivan, Joseph Timothy, Reedy, Robert, Buonassisi, Tonio, Aziz, Michael J.

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Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur by Fabbri, Filippo, Smith, Matthew J., Recht, Daniel, Aziz, Michael J., Salviati, Giancarlo, Gradecak, Silvija

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Development of knife-edge ridges on ion-bombarded surfaces by Holmes-Cerfon, Miranda, Zhou, Wei, Bertozzi, Andrea L., Brenner, Michael P., Aziz, Michael J.

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Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon by Krich, Jacob J., Akey, Austin J., Recht, D., Aziz, Michael J., Sullivan, Joseph T., Simmons, Christie, Buonassisi, Tonio

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Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin by Ertekin, Elif, Winkler, Mark Thomas, Recht, Daniel, Said, Aurore J., Aziz, Michael J., Grossman, Jeffrey C., Buonassisi, Anthony

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Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes by Sullivan, Joseph Timothy, Buonassisi, Tonio, Said, Aurore J., Recht, Daniel, Warrender, Jeffrey M., Persans, Peter D., Aziz, Michael J.

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Deactivation of metastable single-crystal silicon hyperdoped with sulfur by Krich, Jacob J., Recht, Daniel, Aziz, Michael J., Akey, Austin J, Sullivan, Joseph Timothy, Buonassisi, Anthony, Simmons, Christie B.

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Supersaturating silicon with transition metals by ion implantation and pulsed laser melting by Recht, Daniel, Smith, Matthew J., Charnvanichborikarn, Supakit, Sullivan, Joseph T., Winkler, Mark T., Mathews, Jay, Warrender, Jeffrey M., Buonassisi, Tonio, Williams, James S., Gradecak, Silvija, Aziz, Michael J.

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Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon by Sher, Meng-Ju, Krich, Jacob J., Recht, Daniel, Aziz, Michael J., Lindenberg, Aaron M., Akey, Austin J, Winkler, Mark Thomas, Buonassisi, Anthony, Simmons, Christie B.

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High level active n + doping of strained germanium through co-implantation and nanosecond pulsed laser melting by Pastor, David, Gandhi, Hemi H, Monmeyran, Corentin P, Akey, Austin J, Milazzo, Ruggero, Cai, Yan, Napolitani, Enrico, Gwilliam, Russell M, Crowe, Iain F, Michel, Jurgen, Kimerling, LC, Agarwal, Anuradha, Mazur, Eric, Aziz, Michael J

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Room-temperature sub-band gap optoelectronic response of hyperdoped silicon by Hutchinson, David, Mathews, Jay, Sullivan, Joseph T., Recht, Daniel, Williams, James S., Warrender, Jeffrey M., Persans, Peter D., Aziz, Michael J., Mailoa, Jonathan P, Akey, Austin J, Simmons, Christine B, Sullivan, Joseph Timothy, Winkler, Mark Thomas, Buonassisi, Anthony

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Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur by Winkler, Mark Thomas, Newman, Bonna Kay, Buonassisi, Tonio, Wilks, R. G., Weinhardt, L., Recht, D., Said, A. J., Zhang, Y., Blum, M., Krause, S., Yang, W. L., Heske, C., Aziz, Michael J., Bar, M., Sullivan, Joseph Timothy, Ph. D. Massachusetts Institute of Technology

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