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  1. 1
    Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

    Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD by Jongwan Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Woonyoung Jeong, Seongjae Cho, Won-Jun Lee, Sangjoon Park

    Published 2021-07-01
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    Article
  2. 2
    Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

    Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime by Eunseon Yu, Baegmo Son, Byungmin Kam, Yong Sang Joh, Sangjoon Park, Won‐Jun Lee, Jongwan Jung, Seongjae Cho

    Published 2019-10-01
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    Article

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