Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells by Bennett, SE, Saxey, D, Kappers, M, Barnard, J, Humphreys, C, Smith, G, Oliver, R

Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy by Bennett, SE, Smeeton, T, Saxey, D, Smith, G, Hooper, SE, Heffernan, J, Humphreys, C, Oliver, R

Microstructural origins of localization in InGaN quantum wells by Oliver, R, Bennett, SE, Zhu, T, Beesley, D, Kappers, M, Saxey, D, Cerezo, A, Humphreys, C