Showing 1 - 8 results of 8 for search 'Bennett Brian T', query time: 0.02s Refine Results
  1. 1
    Molecular beam epitaxial growth and charcterization of mismatched InGaAs and InAlAs layers on InP

    Molecular beam epitaxial growth and charcterization of mismatched InGaAs and InAlAs layers on InP by Bennett, Brian R. (Brian Robert)

    Published 2006
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    Thesis
  2. 2
    A long-period magnetotelluric study in California

    A long-period magnetotelluric study in California by Bennett, Brian R. (Brian Robert)

    Published 2010
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    Thesis
  3. 3
    Preparing for OSHAs voluntary protection programs : a guide to success /

    Preparing for OSHAs voluntary protection programs : a guide to success / by 395586 Bennett, Brian T., Deitch, Norman R.

    Published 2010
  4. 4
    Preparing for OSHAs voluntary protection programs [electronics resource] : a guide to success /

    Preparing for OSHAs voluntary protection programs [electronics resource] : a guide to success / by 395586 Bennett, Brian T., Deitch, Norman R.

    Published 2010
  5. 5
    Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors

    Hole mobility enhancement in In0.41 Ga0.59 Sb quantum-well field-effect transistors by Xia, Ling, Boos, J. Brad, Bennett, Brian R., Ancona, Mario G., del Alamo, Jesus A.

    Published 2012
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    Article
  6. 6
    High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications

    High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunications by del Alamo, Jesus A., Bahl, Sandeep R., Bennett, Brian B., Greenberg, David, Azzam, Walid, Makhdumi, Shazia, Rammo, Ferase

    Published 2010
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    Technical Report
  7. 7
    Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

    Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors by Guo, Luke W., Bennett, Brian R., Boos, John Brad, Del Alamo, Jesus A., Lu, Wenjie, del Alamo, Jesus A.

    Published 2016
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    Article
  8. 8
    High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

    High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications by del Alamo, Jesús A., Awanol, Yuji, Bahl, Sandeep R., Bennett, Brian B., Leary, Michael H., Moolji, Akbar A., Donovan, Kelley S., Odoardi, Angela R.

    Published 2010
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    Technical Report

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