Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications por Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim

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Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors por Dae-Myeong Geum, Jinha Lim, Junho Jang, Seungyeop Ahn, SeongKwang Kim, Joonsup Shim, Bong Ho Kim, Juhyuk Park, Woo Jin Baek, Jaeyong Jeong, SangHyeon Kim

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Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics por Bong Ho Kim, Song‐Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Yoon‐Je Suh, Jaeyong Jeong, Chan Jik Lee, Dae‐Myeong Geum, Young Joon Yoon, Sang Hyeon Kim

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Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms por Jaeyong Jeong, Seong Kwang Kim, Yoon-Je Suh, Jisung Lee, Joonyoung Choi, Joon Pyo Kim, Bong Ho Kim, Juhyuk Park, Joonsup Shim, Nahyun Rheem, Chan Jik Lee, Younjung Jo, Dae-Myeong Geum, Seung-Young Park, Jongmin Kim, Sanghyeon Kim

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