NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON. by Wilshaw, P, Booker, G

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS. by Wilshaw, P, Booker, G

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE by Wilshaw, P, Fell, T, Booker, G

BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE by Wilshaw, P, Konkol, A, Booker, G

BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE by Konkol, A, Booker, G, Wilshaw, P

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM by Wilshaw, P, Ourmazd, A, Booker, G

BACKSCATTERED ELECTRON COMPOSITIONAL ANALYSIS OF INTERFACES IN BULK SPECIMENS USING A DECONVOLUTION TECHNIQUE by Wilshaw, P, Konkol, A, Booker, G

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON. by Ourmazd, A, Wilshaw, P, Booker, G

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. by Ourmazd, A, Wilshaw, P, Booker, G

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON by Ourmazd, A, Wilshaw, P, Booker, G

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON by Ourmazd, A, Wilshaw, P, Booker, G

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM. by Wilshaw, P, Ourmazd, A, Booker, G

DEFECT CHARACTERIZATION IN MOCVD INP/GAINAS/INP LAYERS by Jin, N, Booker, G, Blunt, R

DECONVOLUTION METHOD TO OBTAIN COMPOSITION PROFILES FROM SEM BACKSCATTERED ELECTRON SIGNAL PROFILES FOR BULK SPECIMENS by Konkol, A, Wilshaw, P, Booker, G

Microscopy of semiconducting materials, 1983/ by Cullis, A. G., Davidson, S. M., Booker, G. R.

A NEW CONFOCAL SIRM INCORPORATING REFLECTION, TRANSMISSION AND DOUBLE-PASS MODES EITHER WITH OR WITHOUT DIFFERENTIAL PHASE-CONTRAST IMAGING by Torok, P, Booker, G, Laczik, Z, Falster, R

TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE by Seong, T, Booker, G, Norman, A, Harris, P, Stringfellow, G

MODIFICATION OF LAYER INTERDIFFUSION IN GAINAS/GAINASP MULTIPLE-QUANTUM WELLS THROUGH THE CONTROLLED INTRODUCTION OF DISLOCATIONS by Mallard, R, Thrush, E, Galloway, S, Allen, E, Booker, G

MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM by Mock, P, Booker, G, Mason, N, Alphandery, E, Nicholas, R

Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL by Mock, P, Booker, G, Alphandery, E, Nicholas, R, Mason, N