Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates by Bothe, K, Falster, R, Murphy, J

On the mechanism of recombination at oxide precipitates in silicon by Murphy, J, Bothe, K, Voronkov, V, Falster, R

The effect of oxide precipitates on minority carrier lifetime in p-type silicon by Murphy, J, Bothe, K, Olmo, M, Voronkov, V, Falster, R

Minority carrier lifetime in Czochralski silicon containing oxide precipitates by Murphy, J, Bothe, K, Olmo, M, Voronkov, V, Falster, R

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon by Murphy, J, Bothe, K, Krain, R, Voronkov, V, Falster, R

The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon by Murphy, J, Bothe, K, Krain, R, Voronkov, V, Falster, R

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation by Murphy, J, McGuire, R, Bothe, K, Voronkov, V, Falster, R

Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation by Murphy, J, McGuire, R, Bothe, K, Voronkov, V, Falster, R

Recombination at oxide precipitates in silicon by Murphy, J, Bothe, K, Krain, R, Olmo, M, Voronkov, V, Falster, R

Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime by Blum, A, Swirhun, J, Sinton, R, Yan, F, Herasimenka, S, Roth, T, Lauer, K, Haunschild, J, Lim, B, Bothe, K, Hameiri, Z, Seipel, B, Xiong, R, Dhamrin, M, Murphy, J