Bias-dependent STM investigations of trimethylgallium adsorption on Si(001) at elevated temperatures by Norenberg, H, Bowler, DR, Briggs, G

Diffusion of paired hydrogen on Si(001) by Bowler, DR, Owen, J, Miki, K, Briggs, G

Atomically perfect bismuth lines on Si(001) by Miki, K, Bowler, DR, Owen, J, Briggs, G, Sakamoto, K

An experimental-theoretical study of the behaviour of hydrogen on the Si(001) surface by Bowler, DR, Owen, J, Goringe, C, Miki, K, Briggs, G

Bismuth-induced structures on Si(001) surfaces by Miki, K, Owen, J, Bowler, DR, Briggs, G, Sakamoto, K

Hydrogen diffusion on Si(001) by Owen, J, Bowler, DR, Goringe, C, Miki, K, Briggs, G

A proposed structure of the nucleus for gas-source epitaxial growth of silicon by Owen, J, Bowler, DR, Goringe, C, Miki, K, Briggs, G

Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen by Owen, J, Miki, K, Bowler, DR, Goringe, C, Goldfarb, I, Briggs, G

Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms by Owen, J, Miki, K, Bowler, DR, Goringe, C, Goldfarb, I, Briggs, G

Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001) by Goldfarb, I, Owen, J, Hayden, P, Bowler, DR, Miki, K, Briggs, G

Bismuth and antimony nanolines in a Si epitaxial layer by Miki, K, Matsuhata, H, Sakamoto, K, Briggs, G, Owen, J, Bowler, DR

Titanium disilicide nanostructures: two phases and their surfaces by Medeiros-Ribeiro, G, Ohlberg, D, Bowler, DR, Tanner, R, Briggs, G, Williams, R

In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001) by Goldfarb, I, Owen, J, Bowler, DR, Goringe, C, Hayden, P, Miki, K, Pettifor, D, Briggs, G