X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling by Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang

Get full text

Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulatio... by Ji-Hun Kim, Chae-Yun Lim, Jae-Hun Lee, Jun-Hyeok Choi, Byoung-Gue Min, Dong Min Kang, Hyun-Seok Kim

Get full text

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study by Jun-Ho Lee, Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim

Get full text

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process by Byoung-Gue Min, Jong-Min Lee, Hyung Sup Yoon, Woo-Jin Chang, Jong-Yul Park, Dong Min Kang, Sung-Jae Chang, Hyun-Wook Jung

Get full text

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study by Woo-Seok Kang, Jun-Hyeok Choi, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Byoung-Gue Min, Dong Min Kang, Jung Han Choi, Hyun-Seok Kim

Get full text

Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study by Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Kyeong-Yong Kim, Byoung-Gue Min, Dong Min Kang, Hyun-Seok Kim

Get full text