AoCStream: All-on-Chip CNN Accelerator with Stream-Based Line-Buffer Architecture and Accelerator-Aware Pruning by Hyeong-Ju Kang, Byung-Do Yang

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Low‐ripple coarse‐fine digital low‐dropout regulator without ringing in the transient state by Ki‐Chan Woo, Byung‐Do Yang

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Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory by Muhammad Ismail, Zahida Batool, Khalid Mahmood, Anwar Manzoor Rana, Byung-Do Yang, Sungjun Kim

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Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance by Dong-Hyun Wang, Ja-Yun Ku, Dae-Han Jung, Khwang-Sun Lee, Woo Cheol Shin, Byung-Do Yang, Jun-Young Park

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Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers by Sobia Ali Khan, Fayyaz Hussain, Daewon Chung, Mehr Khalid Rahmani, Muhammd Ismail, Chandreswar Mahata, Yawar Abbas, Haider Abbas, Changhwan Choi, Alexey N. Mikhaylov, Sergey A. Shchanikov, Byung-Do Yang, Sungjun Kim

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Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering by Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, Sungjun Kim

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