Atomic scale modulation of self‐rectifying resistive switching by interfacial defects by Wu, Xing, Yu, Kaihao, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xixiang, Li, Kun, Liu, Qi, Sun, Litao, Pey, Kinleong

Get full text
Get full text

Intrinsic nanofilamentation in resistive switching by Migas, Dmitri B., Borisenko, Victor E., Wu, Xing, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xi Xiang, Li, Kun, Pey, Kin Leong

Get full text
Get full text

Effects of electrode material and configuration on the characteristics of planar resistive switching devices by Cha, Dongkyu, David, A., Li, K., Wu, T., Peng, H. Y., Pu, L., Wu, J. C., Hong, J. H., Lin, W. N., Li, Y. Y., Ding, J. F.

Get full text
Get full text