AlGaN/GaN-on-silicon metal–oxide–semiconductor high-electron-mobility transistor with breakdown voltage of 800 V and on-state resistance of 3 mΩ·cm2 using a complementary metal–oxi... por Yeo, Yee-Chia, Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Liu, Wei, Tan, Leng Seow, Chen, Kevin Jing

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AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free pr... por Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia

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