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Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio by Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu
Published 2020-01-01
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