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    Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

    Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below by D. Muñoz-Rojas, M. Jordan, C. Yeoh, A. T. Marin, A. Kursumovic, L. A. Dunlop, D. C. Iza, A. Chen, H. Wang, J. L. MacManus Driscoll

    Published 2012-12-01
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