Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review by Aiswarya Pradeepkumar, D. Kurt Gaskill, Francesca Iacopi

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Plasma-Modified, Epitaxial Fabricated Graphene on SiC for the Electrochemical Detection of TNT by Scott A. Trammell, Sandra C. Hernández, Rachael L. Myers-Ward, Daniel Zabetakis, David A. Stenger, D. Kurt Gaskill, Scott G. Walton

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Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation by Shojan P. Pavunny, Andrew L. Yeats, Hunter B. Banks, Edward Bielejec, Rachael L. Myers-Ward, Matthew T. DeJarld, Allan S. Bracker, D. Kurt Gaskill, Samuel G. Carter

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Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates by Wan Sik Hwang, Pei Zhao, Kristof Tahy, Luke O. Nyakiti, Virginia D. Wheeler, Rachael L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Joshua A. Robinson, Wilfried Haensch, Huili (Grace) Xing, Alan Seabaugh, Debdeep Jena

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Quasi-freestanding AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface by Antonija Grubišić-Čabo, Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Jimmy C. Kotsakidis, Yuefeng Yin, Yuefeng Yin, Anton Tadich, Anton Tadich, Anton Tadich, Matthew Haldon, Sean Solari, John Riley, Eric Huwald, Kevin M. Daniels, Kevin M. Daniels, Kevin M. Daniels, Rachael L. Myers-Ward, Mark T. Edmonds, Mark T. Edmonds, Nikhil V. Medhekar, Nikhil V. Medhekar, D. Kurt Gaskill, Michael S. Fuhrer, Michael S. Fuhrer

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