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    Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs

    Role of ex-situ HfO2 passivation to improve device performance and suppress X-ray-induced degradation characteristics of in-situ Si3N4/AlN/GaN MIS-HEMTs by Dalapati, Pradip, Li, Hanchao, Arulkumaran, Subramaniam, Ng, Geok Ing

    Published 2025
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    Journal Article

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