Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission Dahkki Dang, Y. X., Fan, Weijun

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Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method Dahkki Dang, Y. X., Fan, Weijun, Ng, S. T., Yoon, Soon Fatt, Zhang, Dao Hua

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Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector Dahkki Ma, B. S., Dang, Y. X., Fan, Weijun, Cheah, Weng Kwong, Yoon, Soon Fatt

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Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method Dahkki Dang, Y. X., Fan, Weijun, Ng, S. T., Wicaksono, Satrio, Yoon, Soon Fatt, Zhang, Dao Hua

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Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells Dahkki Dang, Y. X., Fan, Weijun, Lu, F., Wang, H., Zhang, Dao Hua, Yoon, Soon Fatt

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GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm Dahkki Ma, B. S., Fan, Weijun, Dang, Y. X., Cheah, Weng Kwong, Loke, Wan Khai, Liu, W., Li, D. S., Yoon, Soon Fatt, Zhang, Dao Hua, Wang, H., Tung, Chih Hang

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