Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission von Dang, Y. X., Fan, Weijun

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Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k⋅p method von Dang, Y. X., Fan, Weijun, Ng, S. T., Yoon, Soon Fatt, Zhang, Dao Hua

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Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector von Ma, B. S., Dang, Y. X., Fan, Weijun, Cheah, Weng Kwong, Yoon, Soon Fatt

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Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method von Dang, Y. X., Fan, Weijun, Ng, S. T., Wicaksono, Satrio, Yoon, Soon Fatt, Zhang, Dao Hua

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Study of the interdiffusion effect on the band structures of Si[sub 1−x]Ge[sub x]∕Si quantum wells von Dang, Y. X., Fan, Weijun, Lu, F., Wang, H., Zhang, Dao Hua, Yoon, Soon Fatt

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GaInNAs double-barrier quantum well infrared photodetector with the photodetection at 1.24 μm von Ma, B. S., Fan, Weijun, Dang, Y. X., Cheah, Weng Kwong, Loke, Wan Khai, Liu, W., Li, D. S., Yoon, Soon Fatt, Zhang, Dao Hua, Wang, H., Tung, Chih Hang

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