The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects by del Alamo, Jesus A.

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Nanometer-scale InGaAs Field-Effect Transistors for THz and CMOS technologies by del Alamo, Jesus A.

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Positive-bias temperature instability (PBTI) of GaN MOSFETs by Guo, Alex, del Alamo, Jesus A.

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Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs by Jin, Donghyun, del Alamo, Jesus A

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Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs by Guo, Alex, del Alamo, Jesus A.

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Gate current degradation in W-band InAlN/AlN/GaN HEMTs under gate stress by Wu, Yufei, del Alamo, Jesus A

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Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate by Demirtas, Sefa, del Alamo, Jesus A.

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors by Joh, Jungwoo, del Alamo, Jesus A.

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Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors by del Alamo, Jesus A., Xia, Ling

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Impact of 110 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors by Xia, Ling, del Alamo, Jesus A.

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Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors by Demirtas, Sefa, del Alamo, Jesus A.

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Mobility enhancement in indium-rich N-channel In[subscript x]Ga[subscript 1-x]As HEMTs by application of <110> uniaxial strain by Xia, Ling, del Alamo, Jesus A.

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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors by Joh, Jungwoo, del Alamo, Jesus A.

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RF Power Degradation of GaN High Electron Mobility Transistors by Joh, Jungwoo, del Alamo, Jesus A.

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Scalability of sub-100 nm thin-channel InAs PHEMTs by del Alamo, Jesus A., Kim, Dae-Hyun

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Fabrication and Characterization of Through-Substrate Interconnects by del Alamo, Jesus A., Wu, Joyce H.

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30-nm InAs PHEMTs With f[subscript T] = 644 GHz and f[subscript max] = 681 GHz by Kim, Dae-Hyun, del Alamo, Jesus A.

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The prospects for 10 nm III-V CMOS by del Alamo, Jesus A., Kim, D.-H.

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Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications by Kim, Dae-Hyun, del Alamo, Jesus A.

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Injection velocity in thin-channel InAs HEMTs by Kim, Tae-Woo, del Alamo, Jesus A.

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