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    On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

    On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer by Kyaw, Z., Ji, Y., Dikme, Y., Ju, Zhengang, Tan, Swee Tiam, Zhang, Zi-Hui, Sun, Xiaowei, Demir, Hilmi Volkan

    Published 2012
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    Journal Article

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